Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
26 A
Maximum Drain Source Voltage
60 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
28 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
19 W
Maximum Gate Source Voltage
±20 V
Width
6.1mm
Number of Elements per Chip
2
Maximum Operating Temperature
+175 °C
Length
5.1mm
Typical Gate Charge @ Vgs
2 nC @ 4.5 V
Height
1.05mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Izcelsmes valsts
Malaysia
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,864
Katrs (Rulli ir 1500) (bez PVN)
€ 1,045
Katrs (Rulli ir 1500) (Ieskaitot PVN)
1500
€ 0,864
Katrs (Rulli ir 1500) (bez PVN)
€ 1,045
Katrs (Rulli ir 1500) (Ieskaitot PVN)
1500
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
1500 - 3000 | € 0,864 | € 1 296,00 |
4500 - 7500 | € 0,838 | € 1 257,00 |
9000+ | € 0,799 | € 1 198,50 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
26 A
Maximum Drain Source Voltage
60 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
28 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
19 W
Maximum Gate Source Voltage
±20 V
Width
6.1mm
Number of Elements per Chip
2
Maximum Operating Temperature
+175 °C
Length
5.1mm
Typical Gate Charge @ Vgs
2 nC @ 4.5 V
Height
1.05mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Izcelsmes valsts
Malaysia