Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
266 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
0.9 nC @ 4.5 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Produkta apraksts
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,088
Katrs (Paka ir 50) (bez PVN)
€ 0,106
Katrs (Paka ir 50) (Ieskaitot PVN)
Standarts
50
€ 0,088
Katrs (Paka ir 50) (bez PVN)
€ 0,106
Katrs (Paka ir 50) (Ieskaitot PVN)
Standarts
50
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
50 - 100 | € 0,088 | € 4,40 |
150 - 250 | € 0,041 | € 2,05 |
300 - 550 | € 0,037 | € 1,85 |
600 - 1150 | € 0,036 | € 1,80 |
1200+ | € 0,036 | € 1,80 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
266 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
0.9 nC @ 4.5 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Produkta apraksts