onsemi NGTB50N60FWG IGBT, 100 A 600 V, 3-Pin TO-247, Through Hole

RS noliktavas nr.: 145-5149Ražotājs: onsemiRažotāja kods: NGTB50N60FWG
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Specifikācija

Brand

onsemi

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

223 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

16.25 x 5.3 x 21.4mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 5,50

Katrs (Tubina ir 30) (bez PVN)

€ 6,655

Katrs (Tubina ir 30) (Ieskaitot PVN)

onsemi NGTB50N60FWG IGBT, 100 A 600 V, 3-Pin TO-247, Through Hole

€ 5,50

Katrs (Tubina ir 30) (bez PVN)

€ 6,655

Katrs (Tubina ir 30) (Ieskaitot PVN)

onsemi NGTB50N60FWG IGBT, 100 A 600 V, 3-Pin TO-247, Through Hole
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

223 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

16.25 x 5.3 x 21.4mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more