Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
300 mA
Maximum Collector Emitter Voltage
30 V
Maximum Emitter Base Voltage
10 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
5000
Maximum Base Emitter Saturation Voltage
1.5 V
Maximum Collector Base Voltage
30 V
Maximum Collector Emitter Saturation Voltage
1.5 V
Maximum Collector Cut-off Current
100nA
Length
3.04mm
Height
1.01mm
Width
1.4mm
Maximum Power Dissipation
300 mW
Minimum Operating Temperature
-55 °C
Dimensions
3.04 x 1.4 x 1.01mm
Maximum Operating Temperature
+150 °C
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,027
Katrs (Rulli ir 10000) (bez PVN)
€ 0,033
Katrs (Rulli ir 10000) (Ieskaitot PVN)
10000
€ 0,027
Katrs (Rulli ir 10000) (bez PVN)
€ 0,033
Katrs (Rulli ir 10000) (Ieskaitot PVN)
10000
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
300 mA
Maximum Collector Emitter Voltage
30 V
Maximum Emitter Base Voltage
10 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
5000
Maximum Base Emitter Saturation Voltage
1.5 V
Maximum Collector Base Voltage
30 V
Maximum Collector Emitter Saturation Voltage
1.5 V
Maximum Collector Cut-off Current
100nA
Length
3.04mm
Height
1.01mm
Width
1.4mm
Maximum Power Dissipation
300 mW
Minimum Operating Temperature
-55 °C
Dimensions
3.04 x 1.4 x 1.01mm
Maximum Operating Temperature
+150 °C