Tehniskie dokumenti
Specifikācija
Brand
onsemiMaximum Continuous Collector Current
40 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
75 W
Package Type
TO-3PF
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
15.7 x 3.2 x 26.7mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Produkta apraksts
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 2,40
Katrs (Tubina ir 30) (bez PVN)
€ 2,904
Katrs (Tubina ir 30) (Ieskaitot PVN)
30
€ 2,40
Katrs (Tubina ir 30) (bez PVN)
€ 2,904
Katrs (Tubina ir 30) (Ieskaitot PVN)
30
Tehniskie dokumenti
Specifikācija
Brand
onsemiMaximum Continuous Collector Current
40 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
75 W
Package Type
TO-3PF
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
15.7 x 3.2 x 26.7mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Produkta apraksts
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.