Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
650 V
Package Type
TO220F
Series
SuperFET III
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
165 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V ac/dc
Width
4.6mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
10.3mm
Typical Gate Charge @ Vgs
35 nC @ 10 V
Height
15.7mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Produkta apraksts
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 2,25
Katrs (Tubina ir 50) (bez PVN)
€ 2,722
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
€ 2,25
Katrs (Tubina ir 50) (bez PVN)
€ 2,722
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
650 V
Package Type
TO220F
Series
SuperFET III
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
165 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V ac/dc
Width
4.6mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
10.3mm
Typical Gate Charge @ Vgs
35 nC @ 10 V
Height
15.7mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Produkta apraksts