Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum Collector Emitter Voltage
100 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Configuration
Single
Dimensions
5.2 x 4.19 x 5.33mm
Maximum Operating Temperature
+150 °C
Height
5.33mm
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,103
Katrs (tiek piegadats Lente) (bez PVN)
€ 0,125
Katrs (tiek piegadats Lente) (Ieskaitot PVN)
3000
€ 0,103
Katrs (tiek piegadats Lente) (bez PVN)
€ 0,125
Katrs (tiek piegadats Lente) (Ieskaitot PVN)
3000
Pirkt iepakojumos
Daudzums | Vienības cena | Per Lente |
---|---|---|
3000 - 3000 | € 0,103 | € 309,00 |
6000 - 9000 | € 0,10 | € 300,00 |
12000 - 15000 | € 0,095 | € 285,00 |
18000 - 21000 | € 0,093 | € 279,00 |
24000+ | € 0,089 | € 267,00 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum Collector Emitter Voltage
100 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Configuration
Single
Dimensions
5.2 x 4.19 x 5.33mm
Maximum Operating Temperature
+150 °C
Height
5.33mm