Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
30 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
500 mW
Minimum DC Current Gain
200, 420
Transistor Configuration
Single
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
5.2 x 4.19 x 5.33mm
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
China
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,111
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,134
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
100
€ 0,111
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,134
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
100
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
100 - 900 | € 0,111 | € 11,10 |
1000 - 1900 | € 0,081 | € 8,10 |
2000 - 9900 | € 0,063 | € 6,30 |
10000 - 23900 | € 0,06 | € 6,00 |
24000+ | € 0,055 | € 5,50 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
30 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
500 mW
Minimum DC Current Gain
200, 420
Transistor Configuration
Single
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
5.2 x 4.19 x 5.33mm
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
China