Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
30 V
Package Type
ATPAK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
31 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
7.3mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.5mm
Typical Gate Charge @ Vgs
34 nC @ 10 V
Height
1.5mm
Izcelsmes valsts
China
Produkta apraksts
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,329
Katrs (Rulli ir 3000) (bez PVN)
€ 0,398
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 0,329
Katrs (Rulli ir 3000) (bez PVN)
€ 0,398
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
30 V
Package Type
ATPAK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
31 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
7.3mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.5mm
Typical Gate Charge @ Vgs
34 nC @ 10 V
Height
1.5mm
Izcelsmes valsts
China
Produkta apraksts