Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
10 A
Maximum Collector Emitter Voltage
50 V
Package Type
TO-220F-3FS
Mounting Type
Through Hole
Maximum Power Dissipation
25 W
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.16 x 4.7 x 15.87mm
Izcelsmes valsts
Korea, Republic Of
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,724
Katrs (Tubina ir 50) (bez PVN)
€ 0,876
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
€ 0,724
Katrs (Tubina ir 50) (bez PVN)
€ 0,876
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
Pirkt iepakojumos
Daudzums | Vienības cena | Per Penālis |
---|---|---|
50 - 450 | € 0,724 | € 36,20 |
500 - 950 | € 0,603 | € 30,15 |
1000+ | € 0,588 | € 29,40 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
10 A
Maximum Collector Emitter Voltage
50 V
Package Type
TO-220F-3FS
Mounting Type
Through Hole
Maximum Power Dissipation
25 W
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.16 x 4.7 x 15.87mm
Izcelsmes valsts
Korea, Republic Of