Dual N-Channel MOSFET, 6.5 A, 20 V, 8-Pin SOIC onsemi NTMD6N02G

RS noliktavas nr.: 805-4525Ražotājs: ON SemiconductorRažotāja kods: NTMD6N02R2G
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

6.5 A

Maximum Drain Source Voltage

20 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

49 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

12 nC @ 4.5 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

2

Height

1.5mm

Minimum Operating Temperature

-55 °C

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,511

Katrs (Paka ir 25) (bez PVN)

€ 0,618

Katrs (Paka ir 25) (Ieskaitot PVN)

Dual N-Channel MOSFET, 6.5 A, 20 V, 8-Pin SOIC onsemi NTMD6N02G

€ 0,511

Katrs (Paka ir 25) (bez PVN)

€ 0,618

Katrs (Paka ir 25) (Ieskaitot PVN)

Dual N-Channel MOSFET, 6.5 A, 20 V, 8-Pin SOIC onsemi NTMD6N02G
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
25 - 25€ 0,511€ 12,78
50 - 225€ 0,42€ 10,50
250 - 475€ 0,341€ 8,52
500 - 975€ 0,297€ 7,42
1000+€ 0,265€ 6,62

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

6.5 A

Maximum Drain Source Voltage

20 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

49 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

12 nC @ 4.5 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

2

Height

1.5mm

Minimum Operating Temperature

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more