Tehniskie dokumenti
Specifikācija
Brand
NXPChannel Type
P
Idss Drain-Source Cut-off Current
1.5 to 20mA
Maximum Drain Source Voltage
30 V
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
30V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
300 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Izcelsmes valsts
China
Produkta apraksts
P-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,616
Katrs (Paka ir 5) (bez PVN)
€ 0,745
Katrs (Paka ir 5) (Ieskaitot PVN)
5
€ 0,616
Katrs (Paka ir 5) (bez PVN)
€ 0,745
Katrs (Paka ir 5) (Ieskaitot PVN)
5
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
5 - 45 | € 0,616 | € 3,08 |
50 - 95 | € 0,585 | € 2,92 |
100 - 245 | € 0,554 | € 2,77 |
250 - 495 | € 0,523 | € 2,62 |
500+ | € 0,507 | € 2,54 |
Tehniskie dokumenti
Specifikācija
Brand
NXPChannel Type
P
Idss Drain-Source Cut-off Current
1.5 to 20mA
Maximum Drain Source Voltage
30 V
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
30V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
300 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Izcelsmes valsts
China
Produkta apraksts
P-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.