N-Channel MOSFET Transistor, 48 A, 60 V, 3-Pin D2PAK Infineon IRFZ44ESPBF

RS noliktavas nr.: 541-0519Ražotājs: InfineonRažotāja kods: IRFZ44ESPBF
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

48 A

Maximum Drain Source Voltage

60 V

Package Type

D2PAK

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

60 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.67mm

Width

9.65mm

Transistor Material

Si

Series

HEXFET

Minimum Operating Temperature

-55 °C

Height

4.83mm

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Noliktavas stāvoklis patreiz nav pieejams

€ 77,00

€ 77,00 1 tubina no 50 (bez PVN)

€ 93,17

€ 93,17 1 tubina no 50 (Ieskaitot PVN)

N-Channel MOSFET Transistor, 48 A, 60 V, 3-Pin D2PAK Infineon IRFZ44ESPBF

€ 77,00

€ 77,00 1 tubina no 50 (bez PVN)

€ 93,17

€ 93,17 1 tubina no 50 (Ieskaitot PVN)

N-Channel MOSFET Transistor, 48 A, 60 V, 3-Pin D2PAK Infineon IRFZ44ESPBF
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cena
1 - 1€ 77,00
2 - 3€ 63,50
4 - 7€ 61,00
8 - 14€ 58,50
15+€ 53,50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

48 A

Maximum Drain Source Voltage

60 V

Package Type

D2PAK

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

60 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.67mm

Width

9.65mm

Transistor Material

Si

Series

HEXFET

Minimum Operating Temperature

-55 °C

Height

4.83mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more