Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
48 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
60 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Width
9.65mm
Transistor Material
Si
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
4.83mm
€ 77,00
€ 77,00 1 tubina no 50 (bez PVN)
€ 93,17
€ 93,17 1 tubina no 50 (Ieskaitot PVN)
1
€ 77,00
€ 77,00 1 tubina no 50 (bez PVN)
€ 93,17
€ 93,17 1 tubina no 50 (Ieskaitot PVN)
1
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena |
---|---|
1 - 1 | € 77,00 |
2 - 3 | € 63,50 |
4 - 7 | € 61,00 |
8 - 14 | € 58,50 |
15+ | € 53,50 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
48 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
60 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Width
9.65mm
Transistor Material
Si
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
4.83mm