Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
41 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.83mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.75mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Height
9.8mm
Series
HEXFET
Minimum Operating Temperature
-55 °C
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,55
Katrs (Tubina ir 50) (bez PVN)
€ 1,876
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
€ 1,55
Katrs (Tubina ir 50) (bez PVN)
€ 1,876
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
Pirkt iepakojumos
Daudzums | Vienības cena | Per Penālis |
---|---|---|
50 - 50 | € 1,55 | € 77,50 |
100 - 200 | € 1,45 | € 72,50 |
250+ | € 1,30 | € 65,00 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
41 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.83mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.75mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Height
9.8mm
Series
HEXFET
Minimum Operating Temperature
-55 °C