Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
14.6 A
Maximum Drain Source Voltage
30 V
Package Type
SO
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Width
4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
41 nC @ 5 V
Series
IRF7809AV
Minimum Operating Temperature
-55 °C
Height
1.5mm
Forward Diode Voltage
1.3V
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,144
Katrs (Rulli ir 4000) (bez PVN)
€ 0,174
Katrs (Rulli ir 4000) (Ieskaitot PVN)
4000
€ 0,144
Katrs (Rulli ir 4000) (bez PVN)
€ 0,174
Katrs (Rulli ir 4000) (Ieskaitot PVN)
4000
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
14.6 A
Maximum Drain Source Voltage
30 V
Package Type
SO
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Width
4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
41 nC @ 5 V
Series
IRF7809AV
Minimum Operating Temperature
-55 °C
Height
1.5mm
Forward Diode Voltage
1.3V