Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
100 V
Series
IPD25CN10N G
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
26 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
71 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Width
7.47mm
Number of Elements per Chip
1
Height
2.41mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,15
Katrs (Paka ir 10) (bez PVN)
€ 1,392
Katrs (Paka ir 10) (Ieskaitot PVN)
10
€ 1,15
Katrs (Paka ir 10) (bez PVN)
€ 1,392
Katrs (Paka ir 10) (Ieskaitot PVN)
10
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
10 - 90 | € 1,15 | € 11,50 |
100 - 240 | € 0,889 | € 8,89 |
250 - 490 | € 0,832 | € 8,32 |
500 - 990 | € 0,775 | € 7,75 |
1000+ | € 0,719 | € 7,19 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
100 V
Series
IPD25CN10N G
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
26 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
71 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Width
7.47mm
Number of Elements per Chip
1
Height
2.41mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V