Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
100 V
Series
IPB180N10S4-02
Package Type
TO-263
Mounting Type
Surface Mount
Pin Count
7 + Tab
Maximum Drain Source Resistance
2.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
10.25mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10mm
Typical Gate Charge @ Vgs
156 nC @ 10 V
Height
4.4mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 5,90
Katrs (Paka ir 5) (bez PVN)
€ 7,139
Katrs (Paka ir 5) (Ieskaitot PVN)
5
€ 5,90
Katrs (Paka ir 5) (bez PVN)
€ 7,139
Katrs (Paka ir 5) (Ieskaitot PVN)
5
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
5 - 20 | € 5,90 | € 29,50 |
25 - 95 | € 4,95 | € 24,75 |
100 - 245 | € 4,30 | € 21,50 |
250 - 495 | € 4,10 | € 20,50 |
500+ | € 3,65 | € 18,25 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
100 V
Series
IPB180N10S4-02
Package Type
TO-263
Mounting Type
Surface Mount
Pin Count
7 + Tab
Maximum Drain Source Resistance
2.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
10.25mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10mm
Typical Gate Charge @ Vgs
156 nC @ 10 V
Height
4.4mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V