Tehniskie dokumenti
Specifikācija
Brand
InfineonMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
187 W
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3+Tab
Transistor Configuration
Single
Dimensions
10.31 x 9.45 x 4.57mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
1630pF
Maximum Operating Temperature
+175 °C
Energy Rating
1.55mJ
Izcelsmes valsts
Malaysia
Produkta apraksts
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,30
Katrs (Rulli ir 1000) (bez PVN)
€ 1,573
Katrs (Rulli ir 1000) (Ieskaitot PVN)
1000
€ 1,30
Katrs (Rulli ir 1000) (bez PVN)
€ 1,573
Katrs (Rulli ir 1000) (Ieskaitot PVN)
1000
Tehniskie dokumenti
Specifikācija
Brand
InfineonMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
187 W
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3+Tab
Transistor Configuration
Single
Dimensions
10.31 x 9.45 x 4.57mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
1630pF
Maximum Operating Temperature
+175 °C
Energy Rating
1.55mJ
Izcelsmes valsts
Malaysia
Produkta apraksts
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.