Infineon FP25R12W2T4BOMA1 IGBT Module, 39 A 1200 V
Tehniskie dokumenti
Specifikācija
Brand
InfineonMaximum Continuous Collector Current
39 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
+/-20V
Maximum Power Dissipation
175 W
Number of Transistors
7
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 40,40
€ 40,40 Katrs (tiek piegadats Penali) (bez PVN)
€ 48,88
€ 48,88 Katrs (tiek piegadats Penali) (Ieskaitot PVN)
Industriālais iepakojums (Paplāte)
1
€ 40,40
€ 40,40 Katrs (tiek piegadats Penali) (bez PVN)
€ 48,88
€ 48,88 Katrs (tiek piegadats Penali) (Ieskaitot PVN)
Industriālais iepakojums (Paplāte)
1
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
InfineonMaximum Continuous Collector Current
39 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
+/-20V
Maximum Power Dissipation
175 W
Number of Transistors
7
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products