Tehniskie dokumenti
Specifikācija
Brand
InfineonMaximum Continuous Collector Current
150 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
790 W
Package Type
AG-34MM-1
Configuration
Series
Mounting Type
Panel Mount
Channel Type
N
Transistor Configuration
Series
Dimensions
94 x 34 x 30.2mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-40 °C
Width
34mm
Izcelsmes valsts
Malaysia
Produkta apraksts
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 90,50
Each (In a Tray of 10) (bez PVN)
€ 109,505
Each (In a Tray of 10) (Ieskaitot PVN)
10
€ 90,50
Each (In a Tray of 10) (bez PVN)
€ 109,505
Each (In a Tray of 10) (Ieskaitot PVN)
10
Tehniskie dokumenti
Specifikācija
Brand
InfineonMaximum Continuous Collector Current
150 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
790 W
Package Type
AG-34MM-1
Configuration
Series
Mounting Type
Panel Mount
Channel Type
N
Transistor Configuration
Series
Dimensions
94 x 34 x 30.2mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-40 °C
Width
34mm
Izcelsmes valsts
Malaysia
Produkta apraksts
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.