Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
11.3 A
Maximum Drain Source Voltage
200 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
6.35mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
6.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
5.35mm
Height
1.1mm
Series
BSC12DN20NS3 G
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,667
Katrs (Rulli ir 5000) (bez PVN)
€ 0,807
Katrs (Rulli ir 5000) (Ieskaitot PVN)
5000
€ 0,667
Katrs (Rulli ir 5000) (bez PVN)
€ 0,807
Katrs (Rulli ir 5000) (Ieskaitot PVN)
5000
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
11.3 A
Maximum Drain Source Voltage
200 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
6.35mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
6.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
5.35mm
Height
1.1mm
Series
BSC12DN20NS3 G
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V