Tehniskie dokumenti
Specifikācija
Brand
InfineonTransistor Type
PNP
Maximum DC Collector Current
-100 mA
Maximum Collector Emitter Voltage
-65 V
Package Type
SOT-363 (SC-88)
Mounting Type
Surface Mount
Maximum Power Dissipation
250 mW
Minimum DC Current Gain
200
Transistor Configuration
Isolated
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
250 MHz
Pin Count
6
Number of Elements per Chip
2
Dimensions
2 x 1.25 x 0.8mm
Maximum Operating Temperature
+150 °C
Produkta apraksts
Dual Matched Bipolar Transistors, Infineon
Bipolar Transistors, Infineon
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,126
Katrs (Rulli ir 3000) (bez PVN)
€ 0,152
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 0,126
Katrs (Rulli ir 3000) (bez PVN)
€ 0,152
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
3000 - 3000 | € 0,126 | € 378,00 |
6000 - 6000 | € 0,12 | € 360,00 |
9000+ | € 0,112 | € 336,00 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonTransistor Type
PNP
Maximum DC Collector Current
-100 mA
Maximum Collector Emitter Voltage
-65 V
Package Type
SOT-363 (SC-88)
Mounting Type
Surface Mount
Maximum Power Dissipation
250 mW
Minimum DC Current Gain
200
Transistor Configuration
Isolated
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
250 MHz
Pin Count
6
Number of Elements per Chip
2
Dimensions
2 x 1.25 x 0.8mm
Maximum Operating Temperature
+150 °C
Produkta apraksts