Fairchild ISL9V3040S3ST IGBT, 21 A 450 V, 3-Pin D2PAK (TO-263), Surface Mount
Tehniskie dokumenti
Specifikācija
Maximum Continuous Collector Current
21 A
Maximum Collector Emitter Voltage
450 V
Maximum Gate Emitter Voltage
±14V
Maximum Power Dissipation
150 W
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.67 x 9.65 x 4.83mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Produkta apraksts
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 15,50
€ 3,10 Katrs (Paka ir 5) (bez PVN)
€ 18,76
€ 3,751 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
€ 15,50
€ 3,10 Katrs (Paka ir 5) (bez PVN)
€ 18,76
€ 3,751 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
Pirkt iepakojumos
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 5 - 5 | € 3,10 | € 15,50 |
| 10 - 95 | € 2,65 | € 13,25 |
| 100 - 245 | € 2,05 | € 10,25 |
| 250 - 495 | € 2,00 | € 10,00 |
| 500+ | € 1,80 | € 9,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Maximum Continuous Collector Current
21 A
Maximum Collector Emitter Voltage
450 V
Maximum Gate Emitter Voltage
±14V
Maximum Power Dissipation
150 W
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.67 x 9.65 x 4.83mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Produkta apraksts
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products