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Jūs skataties 1 - 20 no 7868 rezultāta
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ON Semiconductor, MCR12DSMT4G, Thyristor, 600V 3-Pin, DPAK
  • Maximum Holding Current 10mA
  • Maximum Operating Temperature +110 °C
  • Repetitive Peak Reverse Voltage 600V
  • Length 6.73mm
  • Brand ON Semiconductor
Skatīt līdzīgus produktus Thyristors
BTA12-600BW3G ON Semiconductor, TRIAC, 600V 12A, Gate Trigger 1.7V 50mA, 3-Pin TO-220
  • Maximum Holding Current 50mA
  • Maximum Operating Temperature +125 °C
  • Repetitive Peak Forward Blocking Voltage 800V
  • Repetitive Peak Reverse Voltage 600V
  • Length 10.28mm
Skatīt līdzīgus produktus TRIACs
BTA12-600CW3G ON Semiconductor, TRIAC, 600V 12A, Gate Trigger 1.7V 35mA, 3-Pin TO-220
  • Maximum Holding Current 45mA
  • Maximum Operating Temperature +125 °C
  • Repetitive Peak Forward Blocking Voltage 800V
  • Repetitive Peak Reverse Voltage 600V
  • Length 10.28mm
Skatīt līdzīgus produktus TRIACs
BTA30-600CW3G ON Semiconductor, TRIAC, 600V 30A, Gate Trigger 1.3V 35mA, 3-Pin TO-220
  • Maximum Holding Current 50mA
  • Maximum Operating Temperature +125 °C
  • Repetitive Peak Forward Blocking Voltage 800V
  • Repetitive Peak Reverse Voltage 600V
  • Length 10.28mm
Skatīt līdzīgus produktus TRIACs
ON Semiconductor, NYC0102BLT1G, Silicon Controlled Rectifier, 200V 0.25A 3-Pin, SOT-23
  • Maximum Holding Current 6mA
  • Maximum Operating Temperature +125 °C
  • Repetitive Peak Off-State Current 100µA
  • Repetitive Peak Forward Blocking Voltage 200V
  • Repetitive Peak Reverse Voltage 200V
Skatīt līdzīgus produktus Thyristors
ON Semiconductor M74VHC1GT50DTT1G Non-Inverting CMOS, Single Ended Buffer, 1.65 → 5.5 V, 5-Pin TSOP
  • Number of Channels 1
  • Maximum High Level Output Current -8mA
  • Maximum Operating Temperature +125 °C
  • Length 3mm
  • Schmitt Trigger Input No
Skatīt līdzīgus produktus Buffers
ON Semi TIP127G PNP Darlington Pair, 5 A 100 V HFE:1000, 3-Pin TO-220AB
  • Maximum Collector Emitter Saturation Voltage 4 V
  • Maximum Operating Temperature +150 °C
  • Number of Elements per Chip 1
  • Length 10.28mm
  • Maximum Collector Base Voltage 100 V
Skatīt līdzīgus produktus Darlington Transistors
ON Semiconductor 2SK3748-1E N-channel MOSFET, 4 A, 1500 V, 3-Pin TO-3P
  • Maximum Operating Temperature +150 °C
  • Number of Elements per Chip 1
  • Length 15.5mm
  • Transistor Configuration Single
  • Typical Turn-On Delay Time 17 ns
Skatīt līdzīgus produktus MOSFET Transistors
ON Semi 2N3772G NPN Transistor, 20 A, 50 V, 2-Pin TO-204AA
  • Maximum Collector Emitter Saturation Voltage 4 V
  • Maximum Operating Temperature +200 °C
  • Maximum Operating Frequency 50 kHz
  • Number of Elements per Chip 1
  • Length 39.37mm
Skatīt līdzīgus produktus Bipolar Transistors
ON Semi 2N5684G PNP Transistor, 50 A, 80 V, 2-Pin TO-204
  • Maximum Collector Emitter Saturation Voltage -5 V
  • Maximum Operating Temperature +200 °C
  • Number of Elements per Chip 1
  • Maximum Base Emitter Saturation Voltage -2 V
  • Length 38.86mm
Skatīt līdzīgus produktus Bipolar Transistors
ON Semi 2N5686G NPN Transistor, 50 A, 80 V, 2-Pin TO-204
  • Maximum Collector Emitter Saturation Voltage 5 V
  • Maximum Operating Temperature +200 °C
  • Number of Elements per Chip 1
  • Maximum Base Emitter Saturation Voltage 2 V
  • Length 38.86mm
Skatīt līdzīgus produktus Bipolar Transistors
ON Semi 2N5884G PNP Transistor, 25 A, 80 V, 2-Pin TO-204AA
  • Maximum Collector Emitter Saturation Voltage 2.5 V
  • Maximum Operating Temperature +200 °C
  • Maximum Operating Frequency 1 MHz
  • Number of Elements per Chip 1
  • Length 39.37mm
Skatīt līdzīgus produktus Bipolar Transistors
ON Semi BC817-25LT3G NPN Transistor, 0.5 A, 45 V, 3-Pin SOT-23
  • Maximum Collector Emitter Saturation Voltage 0.7 V
  • Maximum Operating Temperature +150 °C
  • Maximum Operating Frequency 100 MHz
  • Number of Elements per Chip 1
  • Length 2.9mm
Skatīt līdzīgus produktus Bipolar Transistors
ON Semi BC847CLT3G NPN Transistor, 0.1 A, 45 V, 3-Pin SOT-23
  • Maximum Collector Emitter Saturation Voltage 0.6 V
  • Maximum Operating Temperature +150 °C
  • Maximum Operating Frequency 100 MHz
  • Number of Elements per Chip 1
  • Maximum Base Emitter Saturation Voltage 0.9 V
Skatīt līdzīgus produktus Bipolar Transistors
ON Semi BD243CG NPN Transistor, 6 A, 100 V, 3-Pin TO-220
  • Maximum Collector Emitter Saturation Voltage 1.5 V dc
  • Maximum Operating Temperature +150 °C
  • Maximum Operating Frequency 1 MHz
  • Number of Elements per Chip 1
  • Length 10.28mm
Skatīt līdzīgus produktus Bipolar Transistors
ON Semi BDX53CG NPN Darlington Pair, 8 A 100 V HFE:750, 3-Pin TO-220AB
  • Maximum Collector Emitter Saturation Voltage 2 V
  • Maximum Operating Temperature +150 °C
  • Number of Elements per Chip 1
  • Maximum Base Emitter Saturation Voltage 2.5 V
  • Length 10.28mm
Skatīt līdzīgus produktus Darlington Transistors
ON Semi MJ15016G PNP Transistor, 15 A, 120 V, 2-Pin TO-204AA
  • Maximum Collector Emitter Saturation Voltage 5 V
  • Maximum Operating Temperature +200 °C
  • Maximum Operating Frequency 1 MHz
  • Number of Elements per Chip 1
  • Length 39.37mm
Skatīt līdzīgus produktus Bipolar Transistors
ON Semi MJ4502G PNP Transistor, 30 A, 100 V, 2-Pin TO-204AA
  • Maximum Collector Emitter Saturation Voltage 0.8 V
  • Maximum Operating Temperature +200 °C
  • Maximum Operating Frequency 1 MHz
  • Number of Elements per Chip 1
  • Maximum Base Emitter Saturation Voltage 1.3 V
Skatīt līdzīgus produktus Bipolar Transistors
ON Semi MJE18004G NPN Transistor, 5 A, 450 V, 3-Pin TO-220AB
  • Maximum Collector Emitter Saturation Voltage 0.75 V
  • Maximum Operating Temperature +150 °C
  • Maximum Operating Frequency 13 MHz
  • Number of Elements per Chip 1
  • Maximum Base Emitter Saturation Voltage 1.25 V
Skatīt līdzīgus produktus Bipolar Transistors
ON Semi MJE5852G PNP Transistor, 8 A, 400 V, 3-Pin TO-220AB
  • Maximum Collector Emitter Saturation Voltage 5 V
  • Maximum Operating Temperature +150 °C
  • Number of Elements per Chip 1
  • Maximum Base Emitter Saturation Voltage 1.5 V
  • Length 10.28mm
Skatīt līdzīgus produktus Bipolar Transistors
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