Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
76 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Width
4.65mm
Transistor Material
Si
Length
10.51mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
15.49mm
Izcelsmes valsts
Taiwan, Province Of China
Produkta apraksts
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 3,30
Katrs (Paka ir 5) (bez PVN)
€ 3,993
Katrs (Paka ir 5) (Ieskaitot PVN)
5
€ 3,30
Katrs (Paka ir 5) (bez PVN)
€ 3,993
Katrs (Paka ir 5) (Ieskaitot PVN)
5
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
5 - 45 | € 3,30 | € 16,50 |
50 - 120 | € 2,45 | € 12,25 |
125 - 245 | € 2,20 | € 11,00 |
250 - 495 | € 2,00 | € 10,00 |
500+ | € 1,80 | € 9,00 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
76 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Width
4.65mm
Transistor Material
Si
Length
10.51mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
15.49mm
Izcelsmes valsts
Taiwan, Province Of China
Produkta apraksts