N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK Vishay SUM70040E-GE3

RS noliktavas nr.: 124-2248Ražotājs: VishayRažotāja kods: SUM70040E-GE3
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

100 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

9.65mm

Width

10.41mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

76 nC @ 10 V

Height

4.82mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Izcelsmes valsts

Taiwan, Province Of China

Produkta apraksts

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 3,30

Katrs (Paka ir 5) (bez PVN)

€ 3,993

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK Vishay SUM70040E-GE3
Izvēlēties iepakojuma veidu

€ 3,30

Katrs (Paka ir 5) (bez PVN)

€ 3,993

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK Vishay SUM70040E-GE3
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
5 - 45€ 3,30€ 16,50
50 - 120€ 2,45€ 12,25
125 - 245€ 2,20€ 11,00
250 - 495€ 1,95€ 9,75
500+€ 1,80€ 9,00

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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

100 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

9.65mm

Width

10.41mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

76 nC @ 10 V

Height

4.82mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Izcelsmes valsts

Taiwan, Province Of China

Produkta apraksts

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor