Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
24 to 60mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
+25 V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 0.94mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
0.94mm
Width
1.3mm
Produkta apraksts
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,395
Katrs (Paka ir 5) (bez PVN)
€ 0,478
Katrs (Paka ir 5) (Ieskaitot PVN)
5
€ 0,395
Katrs (Paka ir 5) (bez PVN)
€ 0,478
Katrs (Paka ir 5) (Ieskaitot PVN)
5
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
5 - 120 | € 0,395 | € 1,98 |
125 - 245 | € 0,377 | € 1,88 |
250 - 495 | € 0,356 | € 1,78 |
500 - 1245 | € 0,333 | € 1,66 |
1250+ | € 0,323 | € 1,62 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
24 to 60mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
+25 V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 0.94mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
0.94mm
Width
1.3mm
Produkta apraksts
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.