Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
75 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
11 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
90 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
9.2mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10mm
Typical Gate Charge @ Vgs
280 nC @ 10 V
Height
4.5mm
Izcelsmes valsts
Korea, Republic Of
Produkta apraksts
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 4,10
Katrs (Rulli ir 800) (bez PVN)
€ 4,961
Katrs (Rulli ir 800) (Ieskaitot PVN)
800
€ 4,10
Katrs (Rulli ir 800) (bez PVN)
€ 4,961
Katrs (Rulli ir 800) (Ieskaitot PVN)
800
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
800 - 3200 | € 4,10 | € 3 280,00 |
4000+ | € 4,00 | € 3 200,00 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
75 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
11 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
90 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
9.2mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10mm
Typical Gate Charge @ Vgs
280 nC @ 10 V
Height
4.5mm
Izcelsmes valsts
Korea, Republic Of
Produkta apraksts