P-Channel MOSFET, 100 A, 75 V, 3-Pin D2PAK onsemi SMP3003-DL-1E

RS noliktavas nr.: 124-5430Ražotājs: onsemiRažotāja kods: SMP3003-DL-1E
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

75 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

11 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Maximum Power Dissipation

90 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.2mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10mm

Typical Gate Charge @ Vgs

280 nC @ 10 V

Height

4.5mm

Izcelsmes valsts

Korea, Republic Of

Produkta apraksts

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 4,10

Katrs (Rulli ir 800) (bez PVN)

€ 4,961

Katrs (Rulli ir 800) (Ieskaitot PVN)

P-Channel MOSFET, 100 A, 75 V, 3-Pin D2PAK onsemi SMP3003-DL-1E

€ 4,10

Katrs (Rulli ir 800) (bez PVN)

€ 4,961

Katrs (Rulli ir 800) (Ieskaitot PVN)

P-Channel MOSFET, 100 A, 75 V, 3-Pin D2PAK onsemi SMP3003-DL-1E
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Rullis
800 - 3200€ 4,10€ 3 280,00
4000+€ 4,00€ 3 200,00

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

75 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

11 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Maximum Power Dissipation

90 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.2mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10mm

Typical Gate Charge @ Vgs

280 nC @ 10 V

Height

4.5mm

Izcelsmes valsts

Korea, Republic Of

Produkta apraksts

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more