N-Channel MOSFET, 287 A, 60 V, 4 + Tab-Pin DFN onsemi NVMFS5C604NLAF

RS noliktavas nr.: 141-3193Ražotājs: onsemiRažotāja kods: NVMFS5C604NLAFT1G
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

287 A

Maximum Drain Source Voltage

60 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

4 + Tab

Maximum Drain Source Resistance

1.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

6.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

5.1mm

Typical Gate Charge @ Vgs

120 nC @ 10 V

Height

1.05mm

Series

NVMFS5C604NL

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Produkta apraksts

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 6,00

Katrs (bez PVN)

€ 7,26

Katrs (Ieskaitot PVN)

N-Channel MOSFET, 287 A, 60 V, 4 + Tab-Pin DFN onsemi NVMFS5C604NLAF
Izvēlēties iepakojuma veidu

€ 6,00

Katrs (bez PVN)

€ 7,26

Katrs (Ieskaitot PVN)

N-Channel MOSFET, 287 A, 60 V, 4 + Tab-Pin DFN onsemi NVMFS5C604NLAF
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cena
1 - 9€ 6,00
10 - 99€ 5,10
100 - 249€ 4,80
250 - 499€ 4,55
500+€ 4,20

Ideate. Create. Collaborate

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

287 A

Maximum Drain Source Voltage

60 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

4 + Tab

Maximum Drain Source Resistance

1.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

6.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

5.1mm

Typical Gate Charge @ Vgs

120 nC @ 10 V

Height

1.05mm

Series

NVMFS5C604NL

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Produkta apraksts

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more