Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
24.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
27 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
6.22mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
9.6 nC @ 10 V
Height
2.38mm
Series
NVD5C684NL
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Produkta apraksts
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,40
Katrs (Paka ir 10) (bez PVN)
€ 1,694
Katrs (Paka ir 10) (Ieskaitot PVN)
10
€ 1,40
Katrs (Paka ir 10) (bez PVN)
€ 1,694
Katrs (Paka ir 10) (Ieskaitot PVN)
10
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
10 - 90 | € 1,40 | € 14,00 |
100 - 240 | € 0,892 | € 8,92 |
250 - 490 | € 0,866 | € 8,66 |
500 - 990 | € 0,845 | € 8,45 |
1000+ | € 0,824 | € 8,24 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
24.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
27 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
6.22mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
9.6 nC @ 10 V
Height
2.38mm
Series
NVD5C684NL
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Produkta apraksts