N-Channel MOSFET, 38 A, 60 V, 3-Pin DPAK onsemi NVD5C684NL

RS noliktavas nr.: 141-2080Ražotājs: onsemiRažotāja kods: NVD5C684NLT4G
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

38 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

24.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

27 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

9.6 nC @ 10 V

Width

6.22mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Height

2.38mm

Series

NVD5C684NL

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,828

Katrs (Rulli ir 2500) (bez PVN)

€ 1,002

Katrs (Rulli ir 2500) (Ieskaitot PVN)

N-Channel MOSFET, 38 A, 60 V, 3-Pin DPAK onsemi NVD5C684NL

€ 0,828

Katrs (Rulli ir 2500) (bez PVN)

€ 1,002

Katrs (Rulli ir 2500) (Ieskaitot PVN)

N-Channel MOSFET, 38 A, 60 V, 3-Pin DPAK onsemi NVD5C684NL
Noliktavas stāvoklis patreiz nav pieejams

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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

38 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

24.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

27 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

9.6 nC @ 10 V

Width

6.22mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Height

2.38mm

Series

NVD5C684NL

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor