N-Channel MOSFET, 140 A, 40 V, 4+Tab-Pin DFN onsemi NTMFS5C442NTG

RS noliktavas nr.: 126-3475Ražotājs: ON SemiconductorRažotāja kods: NTMFS5C442NT1G
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

140 A

Maximum Drain Source Voltage

40 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

4+Tab

Maximum Drain Source Resistance

2.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

83 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.1mm

Typical Gate Charge @ Vgs

32 nC @ 10 V

Height

1.05mm

Series

NTMFS5C442N

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 1,60

Katrs (Paka ir 5) (bez PVN)

€ 1,936

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 140 A, 40 V, 4+Tab-Pin DFN onsemi NTMFS5C442NTG

€ 1,60

Katrs (Paka ir 5) (bez PVN)

€ 1,936

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 140 A, 40 V, 4+Tab-Pin DFN onsemi NTMFS5C442NTG
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
5 - 95€ 1,60€ 8,00
100 - 495€ 1,00€ 5,00
500 - 995€ 0,881€ 4,40
1000 - 1495€ 0,729€ 3,64
1500+€ 0,681€ 3,40

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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

140 A

Maximum Drain Source Voltage

40 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

4+Tab

Maximum Drain Source Resistance

2.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

83 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.1mm

Typical Gate Charge @ Vgs

32 nC @ 10 V

Height

1.05mm

Series

NTMFS5C442N

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V