N-Channel MOSFET, 59 A, 30 V, 8-Pin SO-8FL onsemi NTMFS4841NHTG

RS noliktavas nr.: 124-5408Ražotājs: onsemiRažotāja kods: NTMFS4841NHT1G
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

59 A

Maximum Drain Source Voltage

30 V

Package Type

SO-8FL

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

11.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

41.7 W

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

5.1mm

Typical Gate Charge @ Vgs

11.3 nC @ 4.5 V, 24.4 nC @ 11.5 V

Width

6.1mm

Number of Elements per Chip

1

Height

1.1mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Malaysia

Produkta apraksts

N-Channel Power MOSFET, 30V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,838

Katrs (Rulli ir 1500) (bez PVN)

€ 1,014

Katrs (Rulli ir 1500) (Ieskaitot PVN)

N-Channel MOSFET, 59 A, 30 V, 8-Pin SO-8FL onsemi NTMFS4841NHTG

€ 0,838

Katrs (Rulli ir 1500) (bez PVN)

€ 1,014

Katrs (Rulli ir 1500) (Ieskaitot PVN)

N-Channel MOSFET, 59 A, 30 V, 8-Pin SO-8FL onsemi NTMFS4841NHTG
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

59 A

Maximum Drain Source Voltage

30 V

Package Type

SO-8FL

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

11.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

41.7 W

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

5.1mm

Typical Gate Charge @ Vgs

11.3 nC @ 4.5 V, 24.4 nC @ 11.5 V

Width

6.1mm

Number of Elements per Chip

1

Height

1.1mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Malaysia

Produkta apraksts

N-Channel Power MOSFET, 30V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more