Dual N-Channel MOSFET, 8.9 A, 40 V, 8-Pin SOIC onsemi NTMD5838NLRG

RS noliktavas nr.: 124-5407Ražotājs: onsemiRažotāja kods: NTMD5838NLR2G
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

8.9 A

Maximum Drain Source Voltage

40 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

36 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Length

5mm

Typical Gate Charge @ Vgs

17 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4mm

Number of Elements per Chip

2

Minimum Operating Temperature

-55 °C

Height

1.5mm

Izcelsmes valsts

Philippines

Produkta apraksts

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,516

Katrs (Rulli ir 2500) (bez PVN)

€ 0,624

Katrs (Rulli ir 2500) (Ieskaitot PVN)

Dual N-Channel MOSFET, 8.9 A, 40 V, 8-Pin SOIC onsemi NTMD5838NLRG

€ 0,516

Katrs (Rulli ir 2500) (bez PVN)

€ 0,624

Katrs (Rulli ir 2500) (Ieskaitot PVN)

Dual N-Channel MOSFET, 8.9 A, 40 V, 8-Pin SOIC onsemi NTMD5838NLRG
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

8.9 A

Maximum Drain Source Voltage

40 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

36 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Length

5mm

Typical Gate Charge @ Vgs

17 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4mm

Number of Elements per Chip

2

Minimum Operating Temperature

-55 °C

Height

1.5mm

Izcelsmes valsts

Philippines

Produkta apraksts

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more