N-Channel MOSFET, 32 A, 100 V, 3-Pin DPAK onsemi NTD6414ANT4G

RS noliktavas nr.: 124-5402Ražotājs: ON SemiconductorRažotāja kods: NTD6414ANT4G
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

32 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

37 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

100 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.73mm

Typical Gate Charge @ Vgs

40 nC @ 10 V

Height

2.38mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Czech Republic

Produkta apraksts

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,464

Katrs (Rulli ir 2500) (bez PVN)

€ 0,561

Katrs (Rulli ir 2500) (Ieskaitot PVN)

N-Channel MOSFET, 32 A, 100 V, 3-Pin DPAK onsemi NTD6414ANT4G

€ 0,464

Katrs (Rulli ir 2500) (bez PVN)

€ 0,561

Katrs (Rulli ir 2500) (Ieskaitot PVN)

N-Channel MOSFET, 32 A, 100 V, 3-Pin DPAK onsemi NTD6414ANT4G
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

32 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

37 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

100 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.73mm

Typical Gate Charge @ Vgs

40 nC @ 10 V

Height

2.38mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Czech Republic

Produkta apraksts

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more