onsemi NGTB25N120FL3WG IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole

RS noliktavas nr.: 123-8830Ražotājs: onsemiRažotāja kods: NGTB25N120FL3WG
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

349 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

16.25 x 5.3 x 21.4mm

Minimum Operating Temperature

-55 °C

Gate Capacitance

3085pF

Maximum Operating Temperature

+175 °C

Produkta apraksts

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 6,40

Katrs (Paka ir 2) (bez PVN)

€ 7,744

Katrs (Paka ir 2) (Ieskaitot PVN)

onsemi NGTB25N120FL3WG IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole
Izvēlēties iepakojuma veidu

€ 6,40

Katrs (Paka ir 2) (bez PVN)

€ 7,744

Katrs (Paka ir 2) (Ieskaitot PVN)

onsemi NGTB25N120FL3WG IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
2 - 8€ 6,40€ 12,80
10 - 98€ 5,50€ 11,00
100 - 248€ 4,35€ 8,70
250 - 498€ 4,15€ 8,30
500+€ 3,85€ 7,70

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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

349 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

16.25 x 5.3 x 21.4mm

Minimum Operating Temperature

-55 °C

Gate Capacitance

3085pF

Maximum Operating Temperature

+175 °C

Produkta apraksts

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.