N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220FP onsemi NDF10N60ZG

RS noliktavas nr.: 124-5385Ražotājs: onsemiRažotāja kods: NDF10N60ZG
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

750 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Maximum Power Dissipation

39 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.9mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.63mm

Typical Gate Charge @ Vgs

47 nC @ 10 V

Height

16.12mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Korea, Republic Of

Produkta apraksts

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,51

Katrs (Tubina ir 50) (bez PVN)

€ 0,617

Katrs (Tubina ir 50) (Ieskaitot PVN)

N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220FP onsemi NDF10N60ZG

€ 0,51

Katrs (Tubina ir 50) (bez PVN)

€ 0,617

Katrs (Tubina ir 50) (Ieskaitot PVN)

N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220FP onsemi NDF10N60ZG
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

750 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Maximum Power Dissipation

39 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.9mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.63mm

Typical Gate Charge @ Vgs

47 nC @ 10 V

Height

16.12mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Korea, Republic Of

Produkta apraksts

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more