Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
50 A
Maximum Collector Emitter Voltage
80 V
Package Type
TO-204
Mounting Type
Through Hole
Maximum Power Dissipation
300 mW
Minimum DC Current Gain
15
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Pin Count
2
Number of Elements per Chip
1
Dimensions
38.86 x 26.67 x 8.51mm
Maximum Operating Temperature
+200 °C
Izcelsmes valsts
Mexico
Produkta apraksts
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 14,40
Each (In a Tray of 100) (bez PVN)
€ 17,424
Each (In a Tray of 100) (Ieskaitot PVN)
100
€ 14,40
Each (In a Tray of 100) (bez PVN)
€ 17,424
Each (In a Tray of 100) (Ieskaitot PVN)
100
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
50 A
Maximum Collector Emitter Voltage
80 V
Package Type
TO-204
Mounting Type
Through Hole
Maximum Power Dissipation
300 mW
Minimum DC Current Gain
15
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Pin Count
2
Number of Elements per Chip
1
Dimensions
38.86 x 26.67 x 8.51mm
Maximum Operating Temperature
+200 °C
Izcelsmes valsts
Mexico
Produkta apraksts
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.