N-Channel MOSFET, 17 A, 800 V, 3-Pin TO-220 Infineon SPP17N80C3XKSA1
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
800 V
Package Type
TO-220
Series
CoolMOS C3
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
290 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
227 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
10.36mm
Typical Gate Charge @ Vgs
88 nC @ 10 V
Width
4.57mm
Number of Elements per Chip
1
Height
9.45mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 3,65
Katrs (Tubina ir 50) (bez PVN)
€ 4,416
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
€ 3,65
Katrs (Tubina ir 50) (bez PVN)
€ 4,416
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
Pirkt iepakojumos
| Daudzums | Vienības cena | Per Penālis |
|---|---|---|
| 50 - 50 | € 3,65 | € 182,50 |
| 100 - 200 | € 3,45 | € 172,50 |
| 250+ | € 3,30 | € 165,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
800 V
Package Type
TO-220
Series
CoolMOS C3
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
290 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
227 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
10.36mm
Typical Gate Charge @ Vgs
88 nC @ 10 V
Width
4.57mm
Number of Elements per Chip
1
Height
9.45mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products