N-Channel MOSFET, 130 A, 200 V, 3-Pin TO-247AC Infineon IRFP4668PBF

RS noliktavas nr.: 124-9022Ražotājs: InfineonRažotāja kods: IRFP4668PBF
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

130 A

Maximum Drain Source Voltage

200 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

10 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

520 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Length

15.87mm

Typical Gate Charge @ Vgs

161 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

5.31mm

Number of Elements per Chip

1

Height

20.7mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Mexico

Produkta apraksts

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 3,65

Katrs (Tubina ir 25) (bez PVN)

€ 4,416

Katrs (Tubina ir 25) (Ieskaitot PVN)

N-Channel MOSFET, 130 A, 200 V, 3-Pin TO-247AC Infineon IRFP4668PBF

€ 3,65

Katrs (Tubina ir 25) (bez PVN)

€ 4,416

Katrs (Tubina ir 25) (Ieskaitot PVN)

N-Channel MOSFET, 130 A, 200 V, 3-Pin TO-247AC Infineon IRFP4668PBF
Noliktavas stāvoklis patreiz nav pieejams

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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

130 A

Maximum Drain Source Voltage

200 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

10 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

520 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Length

15.87mm

Typical Gate Charge @ Vgs

161 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

5.31mm

Number of Elements per Chip

1

Height

20.7mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Mexico

Produkta apraksts

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.