N-Channel MOSFET, 16 A, 650 V, 3-Pin TO-220 Infineon IPP60R199CPXKSA1

RS noliktavas nr.: 911-0872Ražotājs: InfineonRažotāja kods: IPP60R199CPXKSA1
brand-logo
View all in MOSFET tranzistori

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

490 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

139 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.36mm

Width

4.57mm

Typical Gate Charge @ Vgs

32 nC @ 10 V

Series

CoolMOS CP

Minimum Operating Temperature

-55 °C

Height

15.95mm

Izcelsmes valsts

Malaysia

Produkta apraksts

Infineon CoolMOS™CP Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 3,35

Katrs (Tubina ir 50) (bez PVN)

€ 4,054

Katrs (Tubina ir 50) (Ieskaitot PVN)

N-Channel MOSFET, 16 A, 650 V, 3-Pin TO-220 Infineon IPP60R199CPXKSA1

€ 3,35

Katrs (Tubina ir 50) (bez PVN)

€ 4,054

Katrs (Tubina ir 50) (Ieskaitot PVN)

N-Channel MOSFET, 16 A, 650 V, 3-Pin TO-220 Infineon IPP60R199CPXKSA1
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Penālis
50 - 50€ 3,35€ 167,50
100 - 200€ 3,20€ 160,00
250+€ 2,90€ 145,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

490 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

139 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.36mm

Width

4.57mm

Typical Gate Charge @ Vgs

32 nC @ 10 V

Series

CoolMOS CP

Minimum Operating Temperature

-55 °C

Height

15.95mm

Izcelsmes valsts

Malaysia

Produkta apraksts

Infineon CoolMOS™CP Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.