Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
490 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
139 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.36mm
Width
4.57mm
Typical Gate Charge @ Vgs
32 nC @ 10 V
Series
CoolMOS CP
Minimum Operating Temperature
-55 °C
Height
15.95mm
Izcelsmes valsts
Malaysia
Produkta apraksts
Infineon CoolMOS™CP Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 3,35
Katrs (Tubina ir 50) (bez PVN)
€ 4,054
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
€ 3,35
Katrs (Tubina ir 50) (bez PVN)
€ 4,054
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
Pirkt iepakojumos
Daudzums | Vienības cena | Per Penālis |
---|---|---|
50 - 50 | € 3,35 | € 167,50 |
100 - 200 | € 3,20 | € 160,00 |
250+ | € 2,90 | € 145,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
490 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
139 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.36mm
Width
4.57mm
Typical Gate Charge @ Vgs
32 nC @ 10 V
Series
CoolMOS CP
Minimum Operating Temperature
-55 °C
Height
15.95mm
Izcelsmes valsts
Malaysia
Produkta apraksts
Infineon CoolMOS™CP Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.