N-Channel MOSFET, 15.1 A, 700 V, 3-Pin DPAK Infineon IPD65R400CEAUMA1

RS noliktavas nr.: 130-0903Ražotājs: InfineonRažotāja kods: IPD65R400CEAUMA1
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

15.1 A

Maximum Drain Source Voltage

700 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

118 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

39 nC @ 10 V

Height

2.41mm

Series

CoolMOS CE

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Produkta apraksts

Infineon CoolMOS™ CE Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,356

Katrs (Paka ir 10) (bez PVN)

€ 0,431

Katrs (Paka ir 10) (Ieskaitot PVN)

N-Channel MOSFET, 15.1 A, 700 V, 3-Pin DPAK Infineon IPD65R400CEAUMA1
Izvēlēties iepakojuma veidu

€ 0,356

Katrs (Paka ir 10) (bez PVN)

€ 0,431

Katrs (Paka ir 10) (Ieskaitot PVN)

N-Channel MOSFET, 15.1 A, 700 V, 3-Pin DPAK Infineon IPD65R400CEAUMA1
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

15.1 A

Maximum Drain Source Voltage

700 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

118 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

39 nC @ 10 V

Height

2.41mm

Series

CoolMOS CE

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Produkta apraksts

Infineon CoolMOS™ CE Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more