N-Channel MOSFET, 120 A, 75 V, 3-Pin D2PAK Infineon IPB020NE7N3GATMA1

RS noliktavas nr.: 911-0897Ražotājs: InfineonRažotāja kods: IPB020NE7N3GATMA1
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

75 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.3V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Width

9.45mm

Number of Elements per Chip

1

Length

10.31mm

Typical Gate Charge @ Vgs

155 nC @ 10 V

Height

4.57mm

Series

OptiMOS 3

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 3,45

Katrs (Rulli ir 1000) (bez PVN)

€ 4,174

Katrs (Rulli ir 1000) (Ieskaitot PVN)

N-Channel MOSFET, 120 A, 75 V, 3-Pin D2PAK Infineon IPB020NE7N3GATMA1

€ 3,45

Katrs (Rulli ir 1000) (bez PVN)

€ 4,174

Katrs (Rulli ir 1000) (Ieskaitot PVN)

N-Channel MOSFET, 120 A, 75 V, 3-Pin D2PAK Infineon IPB020NE7N3GATMA1
Noliktavas stāvoklis patreiz nav pieejams

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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

75 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.3V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Width

9.45mm

Number of Elements per Chip

1

Length

10.31mm

Typical Gate Charge @ Vgs

155 nC @ 10 V

Height

4.57mm

Series

OptiMOS 3

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.