Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
10.3 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220 FP
Series
CoolMOS CE
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
28 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.9mm
Maximum Operating Temperature
+150 °C
Length
11.3mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
20.5 nC @ 10 V
Height
16.27mm
Forward Diode Voltage
0.9V
Minimum Operating Temperature
-40 °C
Izcelsmes valsts
China
Produkta apraksts
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,715
Katrs (Tubina ir 450) (bez PVN)
€ 0,865
Katrs (Tubina ir 450) (Ieskaitot PVN)
450
€ 0,715
Katrs (Tubina ir 450) (bez PVN)
€ 0,865
Katrs (Tubina ir 450) (Ieskaitot PVN)
450
Pirkt iepakojumos
Daudzums | Vienības cena | Per Penālis |
---|---|---|
450 - 450 | € 0,715 | € 321,75 |
900 - 900 | € 0,679 | € 305,55 |
1350+ | € 0,636 | € 286,20 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
10.3 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220 FP
Series
CoolMOS CE
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
28 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.9mm
Maximum Operating Temperature
+150 °C
Length
11.3mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
20.5 nC @ 10 V
Height
16.27mm
Forward Diode Voltage
0.9V
Minimum Operating Temperature
-40 °C
Izcelsmes valsts
China
Produkta apraksts
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.