N-Channel MOSFET, 10.1 A, 650 V, 3 + Tab-Pin TO-220FP Infineon IPA65R650CEXKSA1

RS noliktavas nr.: 133-9810Ražotājs: InfineonRažotāja kods: IPA65R650CEXKSA1
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

10.1 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3 + Tab

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

86 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.9mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.65mm

Typical Gate Charge @ Vgs

23 nC @ 10 V

Height

16.15mm

Series

CoolMOS

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

0.9V

Izcelsmes valsts

China

Produkta apraksts

Infineon CoolMOS™ CE Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,458

Katrs (Paka ir 5) (bez PVN)

€ 0,554

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 10.1 A, 650 V, 3 + Tab-Pin TO-220FP Infineon IPA65R650CEXKSA1
Izvēlēties iepakojuma veidu

€ 0,458

Katrs (Paka ir 5) (bez PVN)

€ 0,554

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 10.1 A, 650 V, 3 + Tab-Pin TO-220FP Infineon IPA65R650CEXKSA1
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

10.1 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3 + Tab

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

86 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.9mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.65mm

Typical Gate Charge @ Vgs

23 nC @ 10 V

Height

16.15mm

Series

CoolMOS

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

0.9V

Izcelsmes valsts

China

Produkta apraksts

Infineon CoolMOS™ CE Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.