Infineon IGW50N60TPXKSA1 IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole
Tehniskie dokumenti
Specifikācija
Brand
InfineonMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
1
Maximum Power Dissipation
319.2 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
30kHz
Transistor Configuration
Single
Dimensions
16.13 x 5.21 x 21.1mm
Maximum Operating Temperature
+175 °C
Energy Rating
2.38mJ
Minimum Operating Temperature
-40 °C
Gate Capacitance
1950pF
Produkta apraksts
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 3,05
Katrs (Tubina ir 30) (bez PVN)
€ 3,69
Katrs (Tubina ir 30) (Ieskaitot PVN)
30
€ 3,05
Katrs (Tubina ir 30) (bez PVN)
€ 3,69
Katrs (Tubina ir 30) (Ieskaitot PVN)
30
Pirkt iepakojumos
| Daudzums | Vienības cena | Per Penālis |
|---|---|---|
| 30 - 120 | € 3,05 | € 91,50 |
| 150 - 270 | € 2,65 | € 79,50 |
| 300+ | € 2,55 | € 76,50 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
InfineonMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
1
Maximum Power Dissipation
319.2 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
30kHz
Transistor Configuration
Single
Dimensions
16.13 x 5.21 x 21.1mm
Maximum Operating Temperature
+175 °C
Energy Rating
2.38mJ
Minimum Operating Temperature
-40 °C
Gate Capacitance
1950pF
Produkta apraksts
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products