Infineon IGW30N60TPXKSA1 IGBT, 53 A 600 V, 3-Pin TO-247, Through Hole

RS noliktavas nr.: 133-9873Ražotājs: InfineonRažotāja kods: IGW30N60TPXKSA1
brand-logo
View all in IGBT tranzistori

Tehniskie dokumenti

Specifikācija

Maximum Continuous Collector Current

53 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

200 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

30kHz

Transistor Configuration

Single

Dimensions

16.13 x 5.21 x 21.1mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

1050pF

Maximum Operating Temperature

+175 °C

Energy Rating

1.13mJ

Izcelsmes valsts

China

Produkta apraksts

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 2,55

Katrs (Paka ir 2) (bez PVN)

€ 3,086

Katrs (Paka ir 2) (Ieskaitot PVN)

Infineon IGW30N60TPXKSA1 IGBT, 53 A 600 V, 3-Pin TO-247, Through Hole
Izvēlēties iepakojuma veidu

€ 2,55

Katrs (Paka ir 2) (bez PVN)

€ 3,086

Katrs (Paka ir 2) (Ieskaitot PVN)

Infineon IGW30N60TPXKSA1 IGBT, 53 A 600 V, 3-Pin TO-247, Through Hole
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
2 - 18€ 2,55€ 5,10
20 - 48€ 2,30€ 4,60
50 - 98€ 2,10€ 4,20
100 - 198€ 1,95€ 3,90
200+€ 1,85€ 3,70

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Maximum Continuous Collector Current

53 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

200 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

30kHz

Transistor Configuration

Single

Dimensions

16.13 x 5.21 x 21.1mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

1050pF

Maximum Operating Temperature

+175 °C

Energy Rating

1.13mJ

Izcelsmes valsts

China

Produkta apraksts

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.