N-Channel MOSFET, 40 A, 80 V, 8-Pin TSDSON Infineon BSZ123N08NS3GATMA1

RS noliktavas nr.: 911-0806Ražotājs: InfineonRažotāja kods: BSZ123N08NS3GATMA1
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

80 V

Package Type

TSDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

24 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

66 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.4mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Height

1mm

Series

OptiMOS 3

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Singapore

Produkta apraksts

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,506

Katrs (Rulli ir 5000) (bez PVN)

€ 0,612

Katrs (Rulli ir 5000) (Ieskaitot PVN)

N-Channel MOSFET, 40 A, 80 V, 8-Pin TSDSON Infineon BSZ123N08NS3GATMA1

€ 0,506

Katrs (Rulli ir 5000) (bez PVN)

€ 0,612

Katrs (Rulli ir 5000) (Ieskaitot PVN)

N-Channel MOSFET, 40 A, 80 V, 8-Pin TSDSON Infineon BSZ123N08NS3GATMA1
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Rullis
5000 - 10000€ 0,506€ 2 530,00
15000+€ 0,485€ 2 425,00

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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

80 V

Package Type

TSDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

24 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

66 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.4mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Height

1mm

Series

OptiMOS 3

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Singapore

Produkta apraksts

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.