P-Channel MOSFET, 170 mA, 60 V, 3-Pin SOT-23 Infineon BSS84PH6327XTSA2

RS noliktavas nr.: 911-4842Ražotājs: InfineonRažotāja kods: BSS84PH6327XTSA2
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Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

170 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.3mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.9mm

Typical Gate Charge @ Vgs

1 nC @ 10 V

Height

1mm

Series

SIPMOS

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Noliktavas stāvoklis patreiz nav pieejams

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Noliktavas stāvoklis patreiz nav pieejams

€ 0,035

Katrs (Rulli ir 3000) (bez PVN)

€ 0,042

Katrs (Rulli ir 3000) (Ieskaitot PVN)

P-Channel MOSFET, 170 mA, 60 V, 3-Pin SOT-23 Infineon BSS84PH6327XTSA2

€ 0,035

Katrs (Rulli ir 3000) (bez PVN)

€ 0,042

Katrs (Rulli ir 3000) (Ieskaitot PVN)

P-Channel MOSFET, 170 mA, 60 V, 3-Pin SOT-23 Infineon BSS84PH6327XTSA2
Noliktavas stāvoklis patreiz nav pieejams

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Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

170 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.3mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.9mm

Typical Gate Charge @ Vgs

1 nC @ 10 V

Height

1mm

Series

SIPMOS

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China