N-Channel MOSFET, 50 A, 60 V, 8-Pin TDSON Infineon BSC100N06LS3GATMA1

RS noliktavas nr.: 911-0771Ražotājs: InfineonRažotāja kods: BSC100N06LS3GATMA1
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

60 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.35mm

Typical Gate Charge @ Vgs

34 nC @ 10 V

Height

1.1mm

Series

OptiMOS 3

Minimum Operating Temperature

-55 °C

Produkta apraksts

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Noliktavas stāvoklis patreiz nav pieejams

€ 0,511

Katrs (Rulli ir 5000) (bez PVN)

€ 0,618

Katrs (Rulli ir 5000) (Ieskaitot PVN)

N-Channel MOSFET, 50 A, 60 V, 8-Pin TDSON Infineon BSC100N06LS3GATMA1

€ 0,511

Katrs (Rulli ir 5000) (bez PVN)

€ 0,618

Katrs (Rulli ir 5000) (Ieskaitot PVN)

N-Channel MOSFET, 50 A, 60 V, 8-Pin TDSON Infineon BSC100N06LS3GATMA1
Noliktavas stāvoklis patreiz nav pieejams

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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

60 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.35mm

Typical Gate Charge @ Vgs

34 nC @ 10 V

Height

1.1mm

Series

OptiMOS 3

Minimum Operating Temperature

-55 °C

Produkta apraksts

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.